Modeling self-heating in nanoscale devices

In this paper, a review is presented on the self-heating modeling efforts performed at Arizona State University. In the analysis, first simple SOI Devices are being considered from different technology generations to illustrate what we call “Thermal Landauer picture”. Namely, it is demonstrated via numerical simulations that in the shortest devices the hot spot does not occur in the channel (as it was speculated in previous works), but occurs in the drain contact due to the largely ballistic nature of the carrier transport. Impact of self-heating effects is also examined in dual-gate devices and silicon nanowire transistors.