The thermal model of Fin-FET transistor

This paper shows the thermal analyses of the latest 12 nm FinFET transistors. The simulated structure was based on the chips developed and applied in modern devices designed in Samsung 14 nm Samsung Low Power Early technology. The structure, which is taken into consideration, is the fourfold FinFET transistor including its ambient. In order to simplification of the analysis, the assumption related to the lack of the heat propagation between each of the FinFET cells is used. In the paper, the specification of the analysed chip, the die layers and the material parameters of these dies are pointed. Moreover, the thermal model description is presented. The temperature simulation results using the Finite Difference Method are shown and discussed. The paper is crowned by the conclusions and the brief list of the future research plans.