Effect of the trench depth on the linear mode capability of trench technology MOSFET-s

This paper discusses the effect of the trench depth on the channel temperature in linear mode and thus on the linear mode capability of trench technology MOSFETs. The linear mode operation of MOSFETs is not characterized, qualified and is not tested very detailed by most of the manufacturers. Therefore the parameters that can have an effect on the linear mode capability are not very well known. We have performed electrical and thermal measurements and simulations of the current density of the MOSFET´s conductive channel during linear mode operation. We have observed that due to the dissipated power the channel temperature might reach the intrinsic level and short circuit might occur. We have drawn a direct correlation between the trench depth and the linear mode capability.