DocumentCode
3738893
Title
Effect of the capture cross section of bulk traps in amorphous materials on the frequency dependence of the Capacitance-Voltage characteristic of MIS structures
Author
M. Estrada;A. Cerdeira;V.S. Balderrama;I. Gardu?o;I. Hernandez;J. C. Tinoco;R. Picos;B. I?iguez
Author_Institution
Secci?n de Electr?nica del Estado S?lido, Depto. Ingenier?a El?ctrica, CINVESTAV-IPN, Avda. IPN No 2508, C.P. 07360, Mexico D.F., Mexico
fYear
2015
Firstpage
1
Lastpage
3
Abstract
The dependence with the measurement frequency observed in the Capacitance-Voltage characteristics of Metal-Insulator-Semiconductor structures using an amorphous oxide semiconductor material is presented and analyzed. It is demonstrated by simulation that the effect is due to the Distribution of States (DOS) present in the energy gap of the semiconductor material and strongly depends on the capture cross section of the DOS.
Keywords
"Frequency measurement","Semiconductor device measurement","Capacitance","Capacitance-voltage characteristics","Dielectric measurement","Capacitance measurement","Radio frequency"
Publisher
ieee
Conference_Titel
Power, Electronics and Computing (ROPEC), 2015 IEEE International Autumn Meeting on
Type
conf
DOI
10.1109/ROPEC.2015.7395130
Filename
7395130
Link To Document