Title :
Bias stress study of Metal-Insulator-Semiconductor structures with pulsed laser deposited InGaZnO on atomic layer deposited HfO2
Author :
S. I. Gardu?o;M. Estrada;I. Hern?ndez;A. Cerdeira;J. I. Mej?a;M. E. Rivas;M. A. Quevedo
Author_Institution :
Section of Solid State Electronics, Electric Engineering Department, CINVESTAV-IPN, Mexico City, Mexico
Abstract :
Bias stress study is presented in Metal-Insulator-Semiconductor structure using Indium-Gallium-Zinc oxide film on top of HfO2, deposited by pulsed laser deposition and atomic layer deposition, respectively. The produced effect on this interface is analyzed through hysteresis measurements at different bias conditions for several periods of time.
Keywords :
"Semiconductor device measurement","Stress","Voltage measurement","Hysteresis","Capacitance-voltage characteristics","Thin film transistors","Hafnium compounds"
Conference_Titel :
Power, Electronics and Computing (ROPEC), 2015 IEEE International Autumn Meeting on
DOI :
10.1109/ROPEC.2015.7395135
