Title :
Simulation of 980nm quantum well laser with reversed-graded index waveguide layers
Author :
Shanghua Li;Lin Li;Te Li;Yong Wang;Zhongliang Qiao;Zhanguo Li;Yi Qu;BaoXue Bo;Xiaohui Ma;Guojun Liu
Author_Institution :
National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, Jilin 130022, China
fDate :
7/1/2015 12:00:00 AM
Abstract :
We designed a new waveguide structure of "reversed-graded index" (RGRIN) layer to reduce the vertical far-field divergence, and optimized the RGRIN structure with LASTIP program. By expanding the light field outside active region and keeping the confinement factor at the same time, a RGRIN structure with small vertical divergence angle and low threshold current has been obtained. Compared to broad waveguide structure, RGRIN structure can achieve the same vertical divergence with a thinner thickness.
Keywords :
"Optical waveguides","Threshold current","Indexes","Waveguide lasers","Microelectronics","Diode lasers"
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2015 International Conference on
DOI :
10.1109/ICoOM.2015.7398767
