DocumentCode :
3741072
Title :
Development of high power diode lasers for high performance operation
Author :
Gao Xin;Qiao Zhongliang;Xu Liuyang;Yuan Xuze;Cao Xiwen;Xia Xiaoyu;Bo Baoxue
Author_Institution :
National Key Lab on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, China
fYear :
2015
fDate :
7/1/2015 12:00:00 AM
Firstpage :
65
Lastpage :
68
Abstract :
High power diode lasers have been widely used in pumping solid state lasers and double-cladding fiber lasers etc. Beam and spectrum improvement is now the major consideration for high power diode laser technology. Asymmetric Broad waveguide structure, tapered broad stripe and compact VBG external cavity have been designed for improving slope efficiency, lateral beam quality and spectrum characteristics of 976 nm wavelength broad-area stripe diode lasers.
Keywords :
"Diode lasers","Laser beams","Cavity resonators","Waveguide lasers","Molecular beam epitaxial growth","Measurement by laser beam","Diffraction"
Publisher :
ieee
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2015 International Conference on
Type :
conf
DOI :
10.1109/ICoOM.2015.7398772
Filename :
7398772
Link To Document :
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