Tailing the optical property of GaAsSb by passivating with S2Cl2 solution

We characterized the surface property of GaAsSb that grown by MBE (molecular beam epitaxy) via XRD (X-ray diffraction) and AFM (Atomic Force Microscopy). Based on these measurements, we first did research on the surface of GaAsSb after sulfur passivation and characterized the effect with PL (Photoluminescence) and AFM techniques. The treatment on GaAsSb with S₂Cl₂ solution was carried out with different time, and when the time is 10s, we obtained the best effect of passivation: the enhancement of emission is the highest, up to three orders of magnitude and the surface is covered with sulfides uniformly. Overall, the surface luminescence properties have been greatly improved after sulfur passivation, which is of great value for the applications of GaAsSb devices.