DocumentCode :
3741348
Title :
Effect of semiconductor devices´ output parasitic capacitance on zero-current clamping phenomenon in PWM-VSI drives
Author :
D.B Rathnayake;S.G Abeyratne
Author_Institution :
Department of Electrical and Electronic Engineering, Faculty of Engineering, University of Peradeniya, Sri Lanka
fYear :
2015
Firstpage :
446
Lastpage :
451
Abstract :
In voltage source inverter drives (VSI), in order to avoid a shoot through in DC link due to the finite turn on and turn off times of the semiconductor devices a dead-time is inserted. Even though this dead-time is imperative it causes several aberrations in the output current waveform. Not only it gives rise to odd order harmonics but also it influences zero-current clamping. This paper investigates zero-current clamping phenomenon in a generic sense where output parasitic capacitance is in existence. The effects on voltage, power and torque due to the output parasitic capacitance is discussed. Simulations are carried out under practical conditions and results are presented. Results verify the credibility of the analysis.
Keywords :
"Capacitance","Insulated gate bipolar transistors","Switches"
Publisher :
ieee
Conference_Titel :
Industrial and Information Systems (ICIIS), 2015 IEEE 10th International Conference on
Print_ISBN :
978-1-5090-1741-6
Type :
conf
DOI :
10.1109/ICIINFS.2015.7399053
Filename :
7399053
Link To Document :
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