• DocumentCode
    3741348
  • Title

    Effect of semiconductor devices´ output parasitic capacitance on zero-current clamping phenomenon in PWM-VSI drives

  • Author

    D.B Rathnayake;S.G Abeyratne

  • Author_Institution
    Department of Electrical and Electronic Engineering, Faculty of Engineering, University of Peradeniya, Sri Lanka
  • fYear
    2015
  • Firstpage
    446
  • Lastpage
    451
  • Abstract
    In voltage source inverter drives (VSI), in order to avoid a shoot through in DC link due to the finite turn on and turn off times of the semiconductor devices a dead-time is inserted. Even though this dead-time is imperative it causes several aberrations in the output current waveform. Not only it gives rise to odd order harmonics but also it influences zero-current clamping. This paper investigates zero-current clamping phenomenon in a generic sense where output parasitic capacitance is in existence. The effects on voltage, power and torque due to the output parasitic capacitance is discussed. Simulations are carried out under practical conditions and results are presented. Results verify the credibility of the analysis.
  • Keywords
    "Capacitance","Insulated gate bipolar transistors","Switches"
  • Publisher
    ieee
  • Conference_Titel
    Industrial and Information Systems (ICIIS), 2015 IEEE 10th International Conference on
  • Print_ISBN
    978-1-5090-1741-6
  • Type

    conf

  • DOI
    10.1109/ICIINFS.2015.7399053
  • Filename
    7399053