DocumentCode :
3741762
Title :
A 97G InP-based HBT VCO
Author :
Peng Zhao; Lingling Sun; Haijun Gao
Author_Institution :
Hangzhou Dianzi University, 310018, China
fYear :
2015
Firstpage :
258
Lastpage :
261
Abstract :
A monolithic 97G VCO using InP-based HBT technology has been designed. This VCO delivers a peak output power of 6.254dBm at a center frequency of 97.4 GHz with supply voltage 2V, and dissipated dc power is around 19.1mW.This VCO using Colpitts circuit structure, S-parameter and harmonic balance simulation approach to design on the ADS delivers a peak output voltage of 636mV.
Keywords :
"Yttrium","Voltage-controlled oscillators","Heterojunction bipolar transistors","Layout","Resistance","Impedance matching","Resistors"
Publisher :
ieee
Conference_Titel :
Communication Technology (ICCT), 2015 IEEE 16th International Conference on
Print_ISBN :
978-1-4673-7004-2
Type :
conf
DOI :
10.1109/ICCT.2015.7399837
Filename :
7399837
Link To Document :
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