Title :
Study of the W-band monolithic low-noise amplifier
Author :
Lili Dang; Zhiqun Cheng; Tang Liu; Jian Zhang; Zhiming Fang; Ruirui Chen
Author_Institution :
Key Lab. of RF Circuit and System, Education Ministry, Hangzhou Dianzi University, 310018, China
Abstract :
This paper demonstrates a W-band monolithic Low noise amplifier which is based on UMS company 0.1μm GaAs pHEMT process. The circuit is designed with three-stages amplifiers to meet higher power gain. LNA size is only 1 × 1.7mm yet. The measured results of LNA show the power gain of 12 dB, low NF of 4.7dB, which are consistent well with the simulation ones.
Keywords :
"PHEMTs","MMICs","Impedance matching","Companies","Performance evaluation","Foundries","Electron tubes"
Conference_Titel :
Communication Technology (ICCT), 2015 IEEE 16th International Conference on
Print_ISBN :
978-1-4673-7004-2
DOI :
10.1109/ICCT.2015.7399839
