An ultra-wideband power amplifier based on GaN HEMT

The design, fabrication and measurements of an ultra-broadband power amplifier based on GaN HEMT technology which operates in the frequency ranging from 3 GHz to 8 GHz, is presented in this paper. A TGF2023-2-02 GaN HEMT chip from TriQuint is adopted. The amplifier is designed by using a frequency compensation and multi impedance broadband matching approach for both input and output networks. And a sector micro strip line is implemented in the input matching network to achieve the wideband higher gain features. The measured results show that the amplifier module provided more than 11 dB power gain over 3-8 GHz. The saturated output power is 37.3 dBm under DC bias of Vds=28 V, Vgs=-2.53 V at the frequency of 5 GHz.