Title :
Class-F power amplifier with 82.9% maximum PAE at 1.89GHz for LTE applications
Author :
Kaikai Fan; Zhiqun Cheng; Kai Wang; Guohua Liu; Hui Wang
Author_Institution :
Ministry of Education key Lab. of RF circuits and Systems Hangzhou Dianzi University, 310018, China
Abstract :
A GaN HEMT class-F power amplifier (PA) achieving a high maximum power added efficiency (PAE) is presented. The class-F PA exhibits maximum PAE of 82.9% with an output power of 39dBm at 1.89GHz. The PA shows PAE higher than 75% over 100MHz frequency range from 1.8GHz to 1.9GHz. Source-pull and load-pull techniques in large signal analysis were conducted to satisfy the optimum load resistance at fundamental frequency, second and third harmonics.
Keywords :
"Harmonic analysis","HEMTs","Logic gates","Lead","Impedance","Computational modeling","Microstrip"
Conference_Titel :
Communication Technology (ICCT), 2015 IEEE 16th International Conference on
Print_ISBN :
978-1-4673-7004-2
DOI :
10.1109/ICCT.2015.7399922
