Modeling and simulation of nonlinear transient responses of high-voltage wordline generators in NAND flash memories

This paper describes a behavioral modeling methodology for the nonlinear transient responses of the high-voltage wordline generator in NAND flash memories. Behaviors that affect transient responses are modeled in the behavioral models to reduce computation loads. The transient response simulation including the proposed behavioral models for bandgap references, low drop-out regulators, and switched-capacitor charge-pump achieves 846X speed-up using XMODEL compared to the simulation time using HSPICE.