• DocumentCode
    3742715
  • Title

    A study of CMOS SOI for RF, Microwave and millimeter wave applications

  • Author

    Kaixue Ma;Shouxian Mou;Kiat Seng Yeo

  • Author_Institution
    University of Electronic Science and Technology of China (UESTC), China 610054
  • fYear
    2015
  • Firstpage
    193
  • Lastpage
    194
  • Abstract
    With recent technique advancement, CMOS silicon-on-insulator (SOI) technology seems to be attractive for the implementation of the RF, Microwave and millimeter-wave circuits and systems due to its excellent feature of lower loss, lower noise and good power handling capabilities as compared to its CMOS counterpart. This paper is going to study the state of the art CMOS SOI processes and the applications of CMOS SOI in the RF and mm-wave front-end building blocks such as switch, LNA, PA etc. as well as the systems for commercial and noncommercial applications.
  • Keywords
    "CMOS integrated circuits","Radio frequency","CMOS technology","Silicon-on-insulator","Substrates","Silicon","III-V semiconductor materials"
  • Publisher
    ieee
  • Conference_Titel
    SoC Design Conference (ISOCC), 2015 International
  • Type

    conf

  • DOI
    10.1109/ISOCC.2015.7401784
  • Filename
    7401784