DocumentCode :
37458
Title :
Post Copper CMP Hybrid Clean Process for Advanced BEOL Technology
Author :
Wei-Tsu Tseng ; Devarapalli, Vamsi ; Steffes, James ; Ticknor, Adam ; Khojasteh, Mahmoud ; Poloju, Praneetha ; Goyette, Colin ; Steber, David ; Tai, Li-Heng ; Molis, S. ; Zaitz, Mary ; Rill, Elliott ; Kennett, Michael ; Economikos, Laertis ; Lustig, Nafta
Author_Institution :
Semicond. R&D Center, IBM, Hopewell Junction, NY, USA
Volume :
26
Issue :
4
fYear :
2013
fDate :
Nov. 2013
Firstpage :
493
Lastpage :
499
Abstract :
A “hybrid” post Cu CMP cleaning process that combines acidic and basic clean in sequence is developed and implemented. The new process demonstrates the strengths of both acidic and basic cleans and achieves a more than 60% reduction in CMP defects, such as polish residues, foreign materials, slurry abrasives, scratches, and hollow metal, relative to an all-basic clean process. It also eliminates the circular ring defects that occur intermittently during roller brush cleans. TXRF scans confirm the reduction of AlOx defects when using the hybrid clean process. XPS spectra show similar Cu surface oxidation states between the basic and hybrid clean processes. As revealed by XRD analysis, surface Cu oxide is dissolved into aqueous solution by the acidic clean chemical. The formation mechanism of circular ring defects and the key to their elimination is discussed.
Keywords :
X-ray photoelectron spectra; chemical mechanical polishing; copper; oxidation; quality control; semiconductor device manufacture; surface cleaning; CMP defects; TXRF scans; XPS spectra; XRD analysis; advanced BEOL technology; back-end-of-the-line processes; chemical mechanical planarization; circular ring defects elimination; polish residues; post copper CMP hybrid cleaning process; scratches; semiconductor manufacturing; slurry abrasives; surface oxidation; Abrasives; Brushes; Cleaning; Copper; Planarization; Surface cleaning; Cu CMP; defect reduction; post clean;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2013.2273124
Filename :
6558857
Link To Document :
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