Title :
Numerical Study of Quantum-Dot-Embedded Solar Cells
Author :
Chien-Chung Lin ; Ming-Hsuan Tan ; Che-Pin Tsai ; Kuei-Ya Chuang ; Lay, T.S.
Author_Institution :
Inst. of Photonic Syst., Nat. Chiao Tung Univ., Tainan, Taiwan
Abstract :
A quantum-dot-embedded solar cell model with antireflection coating is proposed and studied numerically. The device model was designed by using MATLAB coding. A proper inclusion of quantum-dot-enhanced carrier absorption was achieved through a modified absorption coefficient and a structure dependent carrier lifetime. The transmission matrix and quasi-drift diffusion method were applied to simulate the optical and electrical characteristics of the device. The experimental results were fitted first to validate the model and provide parameters for optimization. The final simulation showed that the power conversion efficiency (PCE) of an ideal InGaP/GaAs+InAs QD dual-junction cell could achieve 39.04%.
Keywords :
III-V semiconductors; absorption coefficients; antireflection coatings; carrier lifetime; diffusion; gallium arsenide; gallium compounds; indium compounds; numerical analysis; power conversion; semiconductor quantum dots; solar cells; InGaP-GaAs-InAs; MATLAB coding; QD dual-junction cell; antireflection coating; device model; electrical characteristics; numerical study; optical characteristics; power conversion efficiency; quantum-dot-embedded solar cell model; quantum-dot-enhanced carrier absorption coefficient; quasidrift diffusion method; structure dependent carrier lifetime; transmission matrix; Absorption; Charge carrier lifetime; Current density; Gallium arsenide; Mathematical model; Photovoltaic cells; Radiative recombination; Intermediate band solar cell (IBSC); photovoltaic cells; quantum dot; simulation; tandem cell; transmission matrix method;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2013.2244563
