DocumentCode
3747187
Title
Heterojunction detectors from UV to IR
Author
A. G. U. Perera
Author_Institution
Department of Physics and Astronomy, Georgia State University, Atlanta, 30303, USA
fYear
2015
Firstpage
1
Lastpage
5
Abstract
Heterojunction detectors used as free-carrier and intervalence band detectors for a wide wavelength region are presented. Using a well-studied III-V system of GaAs/AlxGa1-xAs to cover a wide wavelength range from UV to far-infrared (THz) is an important development in detector technology. Using the intervalence band (heavy hole, light hole and split off) transitions for high operating temperature detection of mid Infrared radiation is discussed. A promising new way to extend the detection wavelength threshold beyond the standard threshold connected with the energy gap in a GaAs/AlxGa1-xAs system is also presented.
Keywords
"Detectors","Dark current","Gallium arsenide","Heterojunctions","Temperature measurement","Standards","Photonics"
Publisher
ieee
Conference_Titel
Microwave and Photonics (ICMAP), 2015 International Conference on
Print_ISBN
978-1-4673-6897-1
Type
conf
DOI
10.1109/ICMAP.2015.7408697
Filename
7408697
Link To Document