• DocumentCode
    3747187
  • Title

    Heterojunction detectors from UV to IR

  • Author

    A. G. U. Perera

  • Author_Institution
    Department of Physics and Astronomy, Georgia State University, Atlanta, 30303, USA
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Heterojunction detectors used as free-carrier and intervalence band detectors for a wide wavelength region are presented. Using a well-studied III-V system of GaAs/AlxGa1-xAs to cover a wide wavelength range from UV to far-infrared (THz) is an important development in detector technology. Using the intervalence band (heavy hole, light hole and split off) transitions for high operating temperature detection of mid Infrared radiation is discussed. A promising new way to extend the detection wavelength threshold beyond the standard threshold connected with the energy gap in a GaAs/AlxGa1-xAs system is also presented.
  • Keywords
    "Detectors","Dark current","Gallium arsenide","Heterojunctions","Temperature measurement","Standards","Photonics"
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Photonics (ICMAP), 2015 International Conference on
  • Print_ISBN
    978-1-4673-6897-1
  • Type

    conf

  • DOI
    10.1109/ICMAP.2015.7408697
  • Filename
    7408697