• DocumentCode
    3747252
  • Title

    Elastic properties of zincblende III-nitrides: A first-principles study

  • Author

    C. P. S. Gayathri;D. V. Satyanand;B. S. Kiran;T. N. Sravya;Bhanu P. Singh;V. Kumar

  • Author_Institution
    Department of Electronics Engineering, Indian School of Mines, Dhanbad-826004 Jharkhand, India
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We have performed first-principle calculations to calculate elastic stiffness constants (C11, C12, C44) and bulk modulus (B) of AlN, GaN and InN semiconductors in the zinc blende structure. These properties are calculated using an ab initio pseudo potential method based on density functional theory (DFT) with the generalized gradient approximation (GGA) for the exchange-correlation functional. The Calculated values are in fair agreement with the values reported by earlier workers.
  • Keywords
    "Gallium nitride","Aluminum nitride","III-V semiconductor materials","Zinc","Electric potential","Density functional theory","Light emitting diodes"
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Photonics (ICMAP), 2015 International Conference on
  • Print_ISBN
    978-1-4673-6897-1
  • Type

    conf

  • DOI
    10.1109/ICMAP.2015.7408762
  • Filename
    7408762
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3747252