Title :
Light switching of resistance of LBMO/ZnO hetero p-n junction
Author :
T. Endo;S. Nonomura;M. Yokura;M. Nagashima;W. Choi;S. L. Reddy;S. Kaneko;H. Nishikawa;N. Iwata;Y. Nakamura
Author_Institution :
Gifu University, 1-1 Yanagido, 501-1193, JAPAN
Abstract :
La(Sr)MnO3 and La(Ba)MnO3 (LBMO) are fabricated on ZnO for novel p-n junction sensitive to UV light. In-plane orientational growths are clarified. LBMO/ZnO shows huge light amplification of current which indicates phase-related resistive change in LBMO by light.
Keywords :
"P-n junctions","Resistance","Zinc oxide","II-VI semiconductor materials","Temperature","Current measurement","Lighting"
Conference_Titel :
Microwave and Photonics (ICMAP), 2015 International Conference on
Print_ISBN :
978-1-4673-6897-1
DOI :
10.1109/ICMAP.2015.7408775
