An improved SiC-JFET body diode model for circuit modeling applications

The physical-based analytical model proposed by Lauritzen and Ma (LM) in 1993 is used to simulate power silicon diode (PiN). Recent, semi-conductor materials with wide band gap are used to improve power system performance. This paper presents, on the one hand, the limit of the physical based analytical LM PiN diode model for silicon carbide diode PiN. On the other hand, an improved of LM model is presented to simulate different wide band gap semi-conductor such as silicon carbide, SiC. Experimental forward and reverse recovery data are confronted with the enhanced model simulations at different operating conditions. Different silicon carbide diodes are tested to validate the ameliorated model. Experimental and simulation results are discussed.