• DocumentCode
    3748071
  • Title

    Direct bandgap GeSn microdisk lasers at 2.5 μm for monolithic integration on Si-platform

  • Author

    S. Wirths;R. Geiger;C. Schulte-Braucks;N. von den Driesch;D. Stange;T. Zabel;Z. Ikonic;J.-M. Hartmann;S. Mantl;H. Sigg;D. Gr?tzmacher;D. Buca

  • Author_Institution
    PGI 9 and JARA-FIT, Forschungszentrum Juelich, Germany
  • fYear
    2015
  • Abstract
    We report on the first experimental demonstration of direct bandgap group IV GeSn microdisk (MD) lasers (λem=2.5 μm) grown on Si(001). The evidence of lasing is supported by a detailed analysis of strain-dependent emission characteristics of GeSn alloys with xSn ≥ 12 at.%. Residual compressive strain within the layer is relieved via under-etching of the MD enabling increased energy offsets up to EL-EΓ=80 meV. The lasing threshold and max. temperature amount to 220 kW/cm2 and 135 K, respectively.
  • Keywords
    "Photonic band gap","Strain","Lasers","Optical device fabrication","Optical resonators","Cavity resonators","Temperature measurement"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409615
  • Filename
    7409615
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3748071