Implantation free GAA double spacer poly-Si nanowires channel junctionless FETs with sub-1V gate operation and near ideal subthreshold swing

The implantation free gate-all-around (GAA) double spacer poly-Si nanowires (NWs) channel junctionless (JL) FETs (GAA DS-NW JL-FETs) have been successfully fabricated and demonstrated in the category of poly-Si NW FETs for the first time. We have scaled down the NW dimension (D_NW) - length (L_NW) × width (W_NW) × thickness (T_NW) - to 80nm×13nm×3nm by novel double spacer NW (DS-NW) processes without use of electron beam (e-beam) lithography tools. GAA DS-NW JL-FETs show good electrical characteristics: near ideal subthreshold swing (S.S.) ~ 61 mV/dec., steep driving swing (D.S.) ~ 82mV/dec., and sub-1V gate operation without implantation processes for future three-dimensional integrated circuits (3-D ICs), system-on-panel (SOP) applications.