DocumentCode
3748097
Title
20-nm-Node trench-gate-self-aligned crystalline In-Ga-Zn-Oxide FET with high frequency and low off-state current
Author
D. Matsubayashi;Y. Asami;Y. Okazaki;M. Kurata;S. Sasagawa;S. Okamoto;Y. Iikubo;T. Sato;Y. Yakubo;R. Honda;M. Tsubuku;M. Fujita;T. Takeuchi;Y. Yamamoto;S. Yamazaki
Author_Institution
Semiconductor Energy Laboratory Co., Ltd. 398 Hase, Atsugi-shi, Kanagawa, Japan
fYear
2015
Abstract
In this study, we proposed scalable trench-gate-self-aligned (TGSA) c-axis aligned crystalline In-Ga-Zn-Oxide field effect transistors (CAAC-IGZO FETs) formed by only three masks. We demonstrated that the 20-nm-node FETs with 11-nm-EOT exhibit good short-channel properties, high frequency, and low off-state current. The TGSA FETs can be candidates for key devices to realize super low power large-scale integration technology such as the Internet of Things.
Keywords
"Field effect transistors","Logic gates","Electrodes","Films","Insulators","Capacitance","Metals"
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN
2156-017X
Type
conf
DOI
10.1109/IEDM.2015.7409641
Filename
7409641
Link To Document