• DocumentCode
    3748098
  • Title

    Extremely high mobility ultra-thin metal-oxide with ns2np2 configuration

  • Author

    C. W. Shih;Albert Chin;Chun-Fu Lu;S. H. Yi

  • Author_Institution
    Dept. of Electronics Engineering, National Chiao-Tung Univ., Hsinchu, Taiwan
  • fYear
    2015
  • Abstract
    To increase the transistor´s current (ION) and decrease the off-state leakage (IOFF), high-mobility, wide-bandgap and ultra-thin body channel materials are crucial for display, sub-10 nm MOSFET, and brain-mimicking 3D IC. The wide-bandgap ultra-thin-film SnO2 nMOSFET has achieved a high ION/IOFF of >107, and high mobility of >0.5X SiO2/Si device value operated at 1 MV/cm. The high mobility TFT is due to the overlapped orbitals.
  • Keywords
    "Three-dimensional displays","Thin film transistors","Integrated circuits","MOSFET circuits","MOSFET","Photonic band gap","Logic gates"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409642
  • Filename
    7409642
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3748098