Title :
Extremely high mobility ultra-thin metal-oxide with ns2np2 configuration
Author :
C. W. Shih;Albert Chin;Chun-Fu Lu;S. H. Yi
Author_Institution :
Dept. of Electronics Engineering, National Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
To increase the transistor´s current (ION) and decrease the off-state leakage (IOFF), high-mobility, wide-bandgap and ultra-thin body channel materials are crucial for display, sub-10 nm MOSFET, and brain-mimicking 3D IC. The wide-bandgap ultra-thin-film SnO2 nMOSFET has achieved a high ION/IOFF of >107, and high mobility of >0.5X SiO2/Si device value operated at 1 MV/cm. The high mobility TFT is due to the overlapped orbitals.
Keywords :
"Three-dimensional displays","Thin film transistors","Integrated circuits","MOSFET circuits","MOSFET","Photonic band gap","Logic gates"
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
DOI :
10.1109/IEDM.2015.7409642
