• DocumentCode
    3748106
  • Title

    Distribution projecting the reliability for 40 nm ReRAM and beyond based on stochastic differential equation

  • Author

    Z. Wei;K. Eriguchi;S. Muraoka;K. Katayama;R. Yasuhara;K. Kawai;Y. Ikeda;M. Yoshimura;Y. Hayakawa;K. Shimakawa;T. Mikawa;S. Yoneda

  • Author_Institution
    Panasonic Semiconductor Solutions Co., Ltd., 1 Kotari-yakemachi, Nagaokakyo, Kyoto, 617-8520, Japan
  • fYear
    2015
  • Abstract
    A physical analytic formula based on Stochastic Differential Equation was successfully developed to describe intrinsic ReRAM variation. The formula was proved useful for projecting scaled ReRAM memory window and resistance distribution after long-term retention, verified by testing 40 nm 2-Mbit ReRAM. The formula also centered on practical and quantitative filament characterization.
  • Keywords
    "Resistance","Stochastic processes","Immune system","Mathematical model","Differential equations","Reliability","Biological system modeling"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409650
  • Filename
    7409650
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3748106