• DocumentCode
    3748107
  • Title

    Through-Cobalt Self Forming Barrier (tCoSFB) for Cu/ULK BEOL: A novel concept for advanced technology nodes

  • Author

    Takeshi Nogami;Benjamin D Briggs;Sevim Korkmaz;Moosung Chae;Christopher Penny;Juntao Li;Wei Wang;Paul S McLaughlin;Terence Kane;Christopher Parks;Anita Madan;Stephan Cohen;Thomas Shaw;Deepika Priyadarshini;Hosadurga Shobha;Son Nguyen;Raghuveer Patlolla;Ja

  • Author_Institution
    IBM at Albany Nano Technology Res. Ctr., 257 Fuller Road, Albany, NY 12203
  • fYear
    2015
  • Abstract
    Through-Co self-forming-barrier (tCoSFB) metallization scheme is introduced, with Cu gap-fill capability down to 7 nm-node dimensions. Mn atoms from doped-seedlayer diffuse through CVD-Co wetting layer, to form TaMnxOy barrier, with integrity proven by vertical-trench triangular-voltage-sweep and barrier-oxidation tests. tCoSFB scheme enables 32% and 45% lower line and via resistance, respectively at 10 nm node dimensions, while achieving superior EM performance to competitive TaN/Co and TaN/Ru-based barriers.
  • Keywords
    "Manganese","Resistance","Oxidation","Atomic layer deposition","Metallization","Surface treatment","Films"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409651
  • Filename
    7409651
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3748107