High frequency high breakdown voltage GaN transistors

In this work, high performance ultrathin barrier GaN devices for high frequency applications are presented. In particular, key features to achieve significant breakdown voltages and high robustness while using sub-10 nm barrier thickness are discussed. It is shown that the thickness of the in-situ SiN cap layer is critical for highly scaled GaN devices in order to avoid parasitic leakage current subsequent to the extra SiN ex-situ passivation.