• DocumentCode
    3748117
  • Title

    26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-Sapphire (VOS) wafer

  • Author

    H. Madan;H-T. Zhang;M. Jerry;D. Mukherjee;N. Alem;R. Engel-Herbert;S. Datta

  • Author_Institution
    The Pennsylvania State University, University Park, Pennsylvania 16802, United States
  • fYear
    2015
  • Abstract
    An electrically triggered VO2 RF switch with a record switching cut off frequency (FCO) of 26.5THz was demonstrated. The switch exhibits an isolation better than 35dB and a low 0.5dB insertion loss up-to 50GHz. The switch features a highly linear response with 1-dB compression point (PidB) better than 12dBm and output third-order intercept point (OIP3) better than 44dBm. The fast insulator to metal-transition (IMT) of the VO2 enables the switch to have an electrical-turn on delay of less than 25ns.
  • Keywords
    "Switches","Radio frequency","Temperature measurement","Solids","Switching circuits","Conductivity","Films"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409661
  • Filename
    7409661
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3748117