26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-Sapphire (VOS) wafer

An electrically triggered VO₂ RF switch with a record switching cut off frequency (F_CO) of 26.5THz was demonstrated. The switch exhibits an isolation better than 35dB and a low 0.5dB insertion loss up-to 50GHz. The switch features a highly linear response with 1-dB compression point (P_idB) better than 12dBm and output third-order intercept point (OIP₃) better than 44dBm. The fast insulator to metal-transition (IMT) of the VO₂ enables the switch to have an electrical-turn on delay of less than 25ns.