Title :
Improvement of characteristics of NbO2 selector and full integration of 4F2 2x-nm tech 1S1R ReRAM
Author :
Soo Gil Kim;Tae Jung Ha;Seonghyun Kim;Jae Yeon Lee;Kyung Wan Kim;Jung Ho Shin;Yong Taek Park;Suk Pyo Song;Beom Yong Kim;Wan Gee Kim;Jong Chul Lee;Hyun Sun Lee;Jong Ho Song;Eung Rim Hwang;Sang Hoon Cho;Ja Chun Ku;Jong Il Kim;Kyu Sung Kim;Jong Hee Yoo;Hyo J
Author_Institution :
R&D division, SK Hynix Inc., 2091 Gyeongchung-daero Bubal-eub, Icheon-si Gyeonggi-do, Korea, 467-701
Abstract :
In this paper, the authors report that 2x nm cross-point ReRAM with 1S1R structure has been successfully developed. Off-current at 1/2 Vsw of 1S1R is one of key factor for high-density ReRAM. NbO2 was chosen as a selector material and off-current and forming characteristics were improved by using stack engineering of top and bottom barriers as well as spacer materials. Finally array operation was characterized with the integration of selector and resistor materials.
Keywords :
"Resistors","Current measurement","Switches","Films","Transistors","CMOS integrated circuits","CMOS technology"
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
DOI :
10.1109/IEDM.2015.7409668
