• DocumentCode
    3748137
  • Title

    Effects of interlayer interaction in van der Waals layered black phosphorus for sub-10 nm FET

  • Author

    Kai-Tak Lam;Sheng Luo;Baokai Wang;Chuang-Han Hsu;Arun Bansil;Hsin Lin;Gengchiau Liang

  • Author_Institution
    Department of Electrical and Computer Engineering, National University of Singapore (NUS), Singapore 117583
  • fYear
    2015
  • Abstract
    Current characteristics of few-layer BP FETs with 7-nm channel were calculated numerically using Wannier function Hamiltonians with accurate interlayer coupling terms. The potentials in each layer were different for thicker BP devices where large OFF-state current is observed, necessitating a double-gated MOSFET for optimal performance. Elastic acoustic phonon scattering reduced ION by 42%.
  • Keywords
    "MOSFET","Logic gates","Electric potential","Performance evaluation","Phonons","Scattering","Acoustics"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409681
  • Filename
    7409681
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3748137