Understanding of BTI for tunnel FETs

We systematically investigated the NBTI degradation of Si-channel p-type tunnel FETs (pTFETs). The NBTI degradation mechanism of pTFETs is almost the same as that of pFETs. It was clarified that the NBTI degradation of pTFETs is only caused by the trap charge and the interface state degradation located in the tunneling region near the n⁺ source/gate edge. Furthermore, in terms of the BTI degradation of n- and p-type TFETs, although the injection sources of carriers inducing PBTI and NBTI are different, applying a drain bias corresponding to the operation conditions has an effect on the BTI lifetime improvement of n- and p-type TFETs.