200mm GaN-on-Si epitaxy and e-mode device technology

In this work, three types of high-voltage buffer architectures for GaN-on-200mm-Si epitaxy are compared and discussed. Two device architectures, recessed gate MISHEMTs and p-GaN HEMTs technology, to obtain e-mode operation developed on these buffers are also discussed. Threshold voltage/output current tuning, threshold voltage stability and possible issues are highlighted. A possible device architecture that combines the best of the two approaches is proposed together with preliminary test results.