• DocumentCode
    3748173
  • Title

    Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications

  • Author

    G. Piccolboni;G. Molas;J. M. Portal;R. Coquand;M. Bocquet;D. Garbin;E. Vianello;C. Carabasse;V. Delaye;C. Pellissier;T. Magis;C. Cagli;M. Gely;O. Cueto;D. Deleruyelle;G. Ghibaudo;B. De Salvo;L. Perniola

  • Author_Institution
    CEA, LETI, Minatec Campus, F-38054 Grenoble, France
  • fYear
    2015
  • Abstract
    Combining Resistive RAM concept with Vertical NAND technology and design, Vertical RRAM (VRRAM) was recently proposed as a cost-effective and extensible technology for future mass data storage applications [1]. 3D RRAM based neural networks were also proposed to emulate the potentiation and depression of a synapse [2], but more complex circuits were not discussed. In previous works [3-4], various RRAM based neuromorphic circuits were proposed and investigated, using planar devices.
  • Keywords
    "Resistance","Switches","Correlation","Neuromorphics","Neural networks","Dispersion","Tin"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409717
  • Filename
    7409717
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3748173