• DocumentCode
    3748191
  • Title

    ZnO thin film transistors for more than just displays

  • Author

    Haoyu U. Li;J. Israel Ramirez;Kaige G. Sun;Yiyang Gong;Yuanyuan V. Li;Thomas N. Jackson

  • Author_Institution
    Center for Thin Film Devices and Materials Research Institute, Department of Electrical Engineering, Penn State University, University Park, PA 16802, USA
  • fYear
    2015
  • Abstract
    We have fabricated ZnO thin film transistors (TFTs) on rigid and flexible substrates with characteristics well suited for displays and more general microelectronic applications. Using weak-reactant plasma enhanced atomic layer deposition (PEALD) we have fabricated single-gate, double-gate, and trilayer ZnO TFTs with good performance and stability. We have also fabricated TFTs and circuits on thin (few μm thick) solution-cast polymeric substrates that can be flexed to small radius for thousands of cycles.
  • Keywords
    "Zinc oxide","II-VI semiconductor materials","Thin film transistors","Logic gates","Substrates","Aluminum oxide","Stress"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409736
  • Filename
    7409736
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3748191