DocumentCode :
3748204
Title :
Self-decomposition of SiO2 due to Si-chemical potential increase in SiO2 between HfO2 and substrate - Comprehensive understanding of SiO2-IL scavenging in HfO2 gate stacks on Si, SiGe and SiC
Author :
Xiuyan Li;Akira Toriumi
Author_Institution :
Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
fYear :
2015
Abstract :
This work thermodynamically clarifies the scavenging mechanism in HfO2 gate stacks on Si substrate and generalizes it to other substrates. The key is to pay attention to the Si chemical potential in SiO2 interface layer (SiO2-IL) affected by 1) Si in substrate, 2) interfacial energy at hetero-interface and 3) oxygen vacancy (Vo) injected from HfO2. In addition, thanks to the generalized model, we demonstrate that the scavenging is extendable to new channel materials containing Si such as SiGe and SiC.
Keywords :
"Silicon","Hafnium compounds","Substrates","Silicon carbide","Silicon germanium","Logic gates","Thermodynamics"
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
Type :
conf
DOI :
10.1109/IEDM.2015.7409750
Filename :
7409750
Link To Document :
بازگشت