• DocumentCode
    3748206
  • Title

    Ge nFET with high electron mobility and superior PBTI reliability enabled by monolayer-Si surface passivation and La-induced interface dipole formation

  • Author

    H. Arimura;S. Sioncke;D. Cott;J. Mitard;T. Conard;W. Vanherle;R. Loo;P. Favia;H. Bender;J. Meersschaut;L. Witters;H. Mertens;J. Franco;L.-A. Ragnarsson;G. Pourtois;M. Heyns;A. Mocuta;N. Collaert;A.V.-Y. Thean

  • Author_Institution
    IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
  • fYear
    2015
  • Abstract
    Monolayer-Si-passivated Ge nFETs with high electron mobility (175 cm2/Vs at Ns=5×1012 cm-2) and superior PBTI reliability (max. Vov = |Vg-Vth| of 0.28V at 125°C) at 0.95-nm-EOT are demonstrated on a 300 mm Si wafer platform. The electron mobility is increased by optimizing the Si thickness while significant improvement in PBTI reliability is realized by band engineering using La-induced interface dipole and defect passivation using laser annealing. This is a significant step forward for the introduction of Ge nFET as high mobility device in advanced technology nodes.
  • Keywords
    "Silicon","Logic gates","Reliability","Electron mobility","Hafnium compounds","Passivation","Annealing"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409752
  • Filename
    7409752
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3748206