• DocumentCode
    3748207
  • Title

    1.5×10−9 Ωcm2 Contact resistivity on highly doped Si:P using Ge pre-amorphization and Ti silicidation

  • Author

    H. Yu;M. Schaekers;E. Rosseel;A. Peter;J.-G. Lee;W.-B. Song;S. Demuynck;T. Chiarella;J-?. Ragnarsson;S. Kubicek;J. Everaert;N. Horiguchi;K. Barla;D. Kim;N. Collaert;A. V.-Y. Thean;K. De Meyer

  • Author_Institution
    IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
  • fYear
    2015
  • Abstract
    Record-low contact resistivity (ρc) for n-Si, down to 1.5×10-9 Q-cm2, is achieved on Si:P epitaxial layer. We confirm that Ti silicidation reduces the pc for n-Si, while an additional Ge pre-amorphization implantation (PAI) before Ti silicidation further extends the pc reduction. In situ doped Si:P with P concentration of 2×1021 cm-3 is used as the substrate, and dynamic surface anneal (DSA) boosts P activation. In addition, TiOx based metal-insulator-semiconductor (MIS) contact is also studied on Si:P but is found to suffer from low thermal stability.
  • Keywords
    "Silicon","Conductivity","Silicidation","Thermal stability","Annealing","Epitaxial growth","Stability analysis"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409753
  • Filename
    7409753
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3748207