Sub-60mV-swing negative-capacitance FinFET without hysteresis

In this work, we report the first Negative-Capacitance FinFET. ALD Hf₀₄₂Zr₀₅₈O₂ is added on top of the FinFET´s gate stack. The test devices have a floating internal gate that can be electrically probed. Direct measurement found the small-signal voltage amplified by 1.6X maximum at the internal gate in agreement with the improvement of the subthreshold swing (from 87 to 55mV/decade). I_ON increased by >25% for the I_OFF. For the first time, we demonstrate that raising HfZrO₂ ferroelectricity, by annealing at higher temperature, reduces and eliminates IV hysteresis and increases the voltage gain. These discoveries will guide future theoretical and experimental work.