• DocumentCode
    3748215
  • Title

    Super steep subthreshold slope PN-body tied SOI FET with ultra low drain voltage down to 0.1V

  • Author

    Jiro Ida;Takayuki Mori;Yousuke Kuramoto;Takashi Horii;Takahiro Yoshida;Kazuma Takeda;Hiroki Kasai;Masao Okihara;Yasuo Arai

  • Author_Institution
    Division of Electrical Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-850 Japan
  • fYear
    2015
  • Abstract
    We propose and demonstrate a super steep Subthreshold Slope (SS) new type SOI FET with a PN-body tied structure. It has a symmetry source and drain (S/D) structure. The device shows a super steep SS (<;6mV/dec) over 3 decades of the drain current with an ultralow drain voltage down to 0.1V. It also shows a low leakage current (below 1pA/um), a good Id-Vd characteristic and a negligible hysteresis characteristic.
  • Keywords
    "Voltage measurement","Current measurement","Logic gates","MOS devices","Thyristors","Field effect transistors","Hysteresis"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409761
  • Filename
    7409761
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3748215