DocumentCode :
3748226
Title :
Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM
Author :
Luc Thomas;Guenole Jan;Son Le;Yuan-Jen Lee;Huanlong Liu;Jian Zhu;Santiago Serrano-Guisan;Ru-Ying Tong;Keyu Pi;Dongna Shen;Renren He;Jesmin Haq;Zhongjian Teng;Rao Annapragada;Vinh Lam;Yu-Jen Wang;Tom Zhong;Terry Torng;Po-Kang Wang
Author_Institution :
TDK- Headway Technologies, 463 S. Milpitas Boulevard, Milpitas CA 95035, USA
fYear :
2015
Abstract :
Current understanding of thermal stability of perpendicular STT-MRAM based on device-level data suggests that the thermal stability factor A is almost independent of device diameter above ~30nm. Here we report that contrary to this conventional wisdom, chip-level data retention exhibits substantial size dependence for diameters between 55 and 100 nm. We show that the method widely used to measure A is inaccurate for devices larger than ~30 nm, leading to significant underestimation of the size dependence. We derive an improved model, allowing us to reconcile the size dependence of A measured at device and chip level.
Keywords :
"Thermal stability","Stability analysis","Temperature measurement","Thermal factors","Energy barrier","Magnetization","Magnetic domains"
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
Type :
conf
DOI :
10.1109/IEDM.2015.7409773
Filename :
7409773
Link To Document :
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