DocumentCode
3748227
Title
20nm DRAM: A new beginning of another revolution
Author
J. M. Park;Y. S. Hwang;S.-W. Kim;S. Y. Han;J. S. Park;J. Kim;J. W. Seo;B. S. Kim;S. H. Shin;C. H. Cho;S. W. Nam;H. S. Hong;K. P. Lee;G. Y. Jin;E. S Jung
Author_Institution
DRAM Technology Development Team, Samsung Electronics Co., San #16 Banwol-Dong, Hwasung-City, Gyounggi-Do, 445-701, Korea
fYear
2015
Abstract
For the first time, 20nm DRAM has been developed and fabricated successfully without extreme ultraviolet (EUV) lithography using the honeycomb structure (HCS) and the air-spacer technology. The cell capacitance (Cs) can be increased by 21% at the same cell size using a novel low-cost HCS technology with one argon fluoride immersion (ArF-i) lithography layer. The parasitic bit-line (BL) capacitance is reduced by 34% using an air-spacer technology whose breakdown voltage is 30% better than that of conventional technology.
Keywords
"Random access memory","Capacitors","Lithography","Capacitance","Honeycomb structures","Metals","Computer architecture"
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN
2156-017X
Type
conf
DOI
10.1109/IEDM.2015.7409774
Filename
7409774
Link To Document