DocumentCode :
3748233
Title :
2D layered materials: From materials properties to device applications
Author :
Peida Zhao;Sujay Desai;Mahmut Tosun;Tania Roy;Hui Fang;Angada Sachid;Matin Amani;Chenming Hu;Ali Javey
Author_Institution :
Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
fYear :
2015
Abstract :
An overview of material properties and the current state of electronic devices based on 2D layered materials is presented. Atomic scale smoothness, varying band alignment and sizeable bandgaps in the single layer limit make this class of materials very interesting for optoelectronic applications. Scaling effects, doping techniques, contacts and strain engineering of 2D materials are discussed. In addition, important advancements in 2D material electronic devices, for example the all-2D field effect transistor (FET), heterojunction devices, and tunnel diode are highlighted.
Keywords :
"Doping","Strain","Logic gates","Semiconductor diodes","Field effect transistors","Silicon","Metals"
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
Type :
conf
DOI :
10.1109/IEDM.2015.7409780
Filename :
7409780
Link To Document :
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