• DocumentCode
    3748236
  • Title

    van der Waals junctions of layered 2D materials for functional devices

  • Author

    Tomoki Machida;Rai Moriya;Miho Aral;Yohta Sata;Takehiro Yamaguchi;Naoto Yabuki;Sei Morikawa;Satoru Masubuchi;Keiji Ueno

  • Author_Institution
    Institute of Industrial Science, University of Tokyo, Tokyo 153-8505, Japan
  • fYear
    2015
  • Abstract
    We fabricated van der Waals (vdW) junctions of two-dimensional (2D) crystals using mechanical exfoliation and transfer technique of atomic layers. By connecting cleaved flakes of Fe0.25TaS2, van der Waals magnet tunnel junction was constructed, exhibiting tunneling magnetoresistance effect. In addition, large current modulation with ON-OFF current ratio exceeding 105 and ON current density of 104 A/cm2 was achieved in metal/MoS2/graphene vertical FET. Josephson effect was demonstrated in van der Waals NbSe2/NbSe2 junctions.
  • Keywords
    "Junctions","Crystals","Josephson junctions","Magnetoresistance","Modulation","Field effect transistors","Temperature measurement"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409783
  • Filename
    7409783
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3748236