Title :
Field-effect control of ions beyond debye-screening limit in nanofluidic transistors
Author :
Qiushi Ran;Yang Liu;Robert W. Dutton
Author_Institution :
Center for Integrated Systems, Stanford University, Stanford, CA, 94305, USA
Abstract :
We investigate the field-effect control of ions in nanofluidic transistors (NFTs) with characteristic channel size (~100 nm) significantly larger than the system´s Debye Length (~10 nm). These 100 nm NFTs achieve an ionic current modulation ratio of ~2.5, demonstrating better performance than the state-of-the-art 20 nm NFTs. The result attests a new operating regime beyond the Debye-screening limit. The relaxed constraint on channel size offers advantages in device manufacturing, testing, and reliability. It also opens up new applications in biological sensing and sample preparation.
Keywords :
"Logic gates","Electrodes","Current measurement","Ions","Voltage measurement","Modulation","Fabrication"
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
DOI :
10.1109/IEDM.2015.7409791