• DocumentCode
    3748260
  • Title

    Single suspended InGaAs nanowire MOSFETs

  • Author

    Cezar B. Zota;Lars-Erik Wernersson;Erik Lind

  • Author_Institution
    Department of Electrical and Information Technology, Lund University, Box 118, Lund, Sweden
  • fYear
    2015
  • Abstract
    We report on In0.85Ga0.15As NWFETs utilizing a single suspended (above the substrate) selectively grown nanowire as the channel. These devices exhibit gm = 3.3 mS/μm and subthreshold slope SS = 118 mV/dec, both at VDS = 0.5 V and LG = 60 nm. This is the highest reported value of gm for all MOSFETs and HEMTs, as well as a strong combination of on and off performance, with Q = gm/SS = 28, the highest for non-planar III-V MOSFETs.
  • Keywords
    "Substrates","Indium gallium arsenide","Indium phosphide","III-V semiconductor materials","Nanoscale devices","Logic gates","Metals"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409808
  • Filename
    7409808
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3748260