Title :
Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices
Author :
Yiming Li;Han-Tung Chang;Chun-Ning Lai;Pei-Jung Chao;Chieh-Yang Chen
Author_Institution :
Parallel and Scientific Computing Laboratory, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan
Abstract :
In this work, process variation effect (PVE), work function fluctuation (WKF), and random dopant fluctuation (RDF) on 10-nm high-K/metal gate gate-all-around silicon nanowire MOSFET devices using full-quantum-mechanically validated and experimentally calibrated device simulation are studied. The small aspect ratio device has greater immunity of RDF, while suffers from PVE and WKF.
Keywords :
"Fluctuations","Resource description framework","Logic gates","Tin","MOSFET","Silicon","Doping"
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
DOI :
10.1109/IEDM.2015.7409827
