• DocumentCode
    3748283
  • Title

    Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

  • Author

    P. Moens;A. Banerjee;M. J. Uren;M. Meneghini;S. Karboyan;I. Chatterjee;P. Vanmeerbeek;M. C?sar;C. Liu;A. Salih;E. Zanoni;G. Meneghesso;M. Kuball;M. Tack

  • Author_Institution
    ON Semiconductor Oudenaarde, Belgium
  • fYear
    2015
  • Abstract
    The role of buffer traps (identified as CN acceptors through current DLTS) in the off-state leakage and dynamic Ron of 650V rated GaN-on-Si power devices is investigated. The dynamic Ron is strongly voltage-dependent, due to the interplay between the dynamic properties of the CN traps and the presence of space-charge limited current components. This results in a complete suppression of dyn Ron degradation under HTRB conditions between 420V and 850V.
  • Keywords
    "Stress","HEMTs","MODFETs","Gallium nitride","Acceleration","Substrates","Degradation"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409831
  • Filename
    7409831
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3748283