• DocumentCode
    3748287
  • Title

    Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels

  • Author

    Alan Seabaugh;Sara Fathipour;Wenjun Li;Hao Lu;Jun Hong Park;Andrew C. Kummel;Debdeep Jena;Susan K. Fullerton-Shirey;Patrick Fay

  • Author_Institution
    Dept. of Electrical Engineering, University of Notre Dame, Notre Dame IN 46556 USA
  • fYear
    2015
  • Abstract
    As the understanding of tunnel field-effect transistors (TFET) advances, new approaches are emerging to lower off-currents, lower defect density in tunnel junctions, and to increase the highest current at which the subthreshold swing of 60 mV/decade (I60) appears. III-N heterojunctions and transition-metal-dichalcogenide (TMD) materials are forcing some new thinking in junction design and doping.
  • Keywords
    "Logic gates","Doping","Ions","Tunneling","Silicon","Aluminum oxide"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409835
  • Filename
    7409835
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3748287