A new readout circuit for infrared imaging sensors

In this paper we designed a new CMOS readout circuit for high-resolution infrared focal plane array (FPA) applications. Substance of material in this circuit is MCT (Mercury Cadmium Telluride). In this circuit, the integration capacitor is placed outside of the unit pixel, reducing the pixel area and allowing integrating the current on larger capacitance for larger charge storage capacity. One of the good properties of current feedback in the CMI structure is that, very low (ideally zero) input impedance is achieved. The unit-cell contains just nine MOS transistors and occupies 30 micro meters by 30 micro meters area in a 0.35 micro-meter CMOS process.